GT1K2P15D5
Goford Semiconductor
IPB100N12S305ATMA2
Part Number：
IPB100N12S305ATMA2
Category：
Single FETs, MOSFETs
Manufacturer：
Infineon Technologies
Description：
MOSFET_(120V 300V)
Packaging：
Tape & Reel (TR)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±20V
- FET Feature -
- Operating Temperature -55°C ~ 175°C (TJ)
- Grade Automotive
- Qualification AEC-Q101
- Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Power Dissipation (Max) 300W (Tc)
- Current - Continuous Drain (Id) @ 25°C 100A (Tc)
- Supplier Device Package PG-TO263-3-2
- Gate Charge (Qg) (Max) @ Vgs 185 nC @ 10 V
- Drain to Source Voltage (Vdss) 120 V
- Vgs(th) (Max) @ Id 4V @ 240µA
- Rds On (Max) @ Id, Vgs 5.1mOhm @ 100A, 10V
- Input Capacitance (Ciss) (Max) @ Vds 11570 pF @ 25 V
