GT1K2P15D5
Goford Semiconductor
IPF129N20NM6ATMA1
Part Number：
IPF129N20NM6ATMA1
Category：
Single FETs, MOSFETs
Manufacturer：
Infineon Technologies
Description：
IPF129N20NM6ATMA1
Packaging：
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Vgs (Max) ±20V
- FET Feature -
- Operating Temperature -55°C ~ 175°C (TJ)
- Grade -
- Qualification -
- Drain to Source Voltage (Vdss) 200 V
- Gate Charge (Qg) (Max) @ Vgs 56 nC @ 10 V
- Package / Case TO-263-7, D2PAK (6 Leads + Tab)
- Drive Voltage (Max Rds On, Min Rds On) 10V, 15V
- Supplier Device Package PG-TO263-7-3
- Input Capacitance (Ciss) (Max) @ Vds 3800 pF @ 100 V
- Current - Continuous Drain (Id) @ 25°C 11A (Ta), 87A (Tc)
- Rds On (Max) @ Id, Vgs 12mOhm @ 65A, 15V
- Vgs(th) (Max) @ Id 4.5V @ 129µA
- Power Dissipation (Max) 3.8W (Ta), 234W (Tc)
