GT1K2P15D5
Goford Semiconductor
IPP70N10S3L12AKSA2
Part Number：
IPP70N10S3L12AKSA2
Category：
Single FETs, MOSFETs
Manufacturer：
Infineon Technologies
Description：
MOSFET_(75V 120V(
Packaging：
Tube
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Obsolete
- Mounting Type Through Hole
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 100 V
- Vgs (Max) ±20V
- FET Feature -
- Operating Temperature -55°C ~ 175°C (TJ)
- Package / Case TO-220-3
- Grade Automotive
- Qualification AEC-Q101
- Power Dissipation (Max) 125W (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Gate Charge (Qg) (Max) @ Vgs 80 nC @ 10 V
- Current - Continuous Drain (Id) @ 25°C 70A (Tc)
- Supplier Device Package PG-TO220-3-1
- Vgs(th) (Max) @ Id 2.4V @ 83µA
- Rds On (Max) @ Id, Vgs 12.1mOhm @ 70A, 10V
- Input Capacitance (Ciss) (Max) @ Vds 5570 pF @ 25 V
