GT1K2P15D5
Goford Semiconductor
IPQC60R017S7AXTMA1
Part Number：
IPQC60R017S7AXTMA1
Category：
Single FETs, MOSFETs
Manufacturer：
Infineon Technologies
Description：
MOSFET
Packaging：
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Vgs (Max) ±20V
- FET Feature -
- Grade Automotive
- Qualification AEC-Q101
- Current - Continuous Drain (Id) @ 25°C 30A (Tc)
- Drain to Source Voltage (Vdss) 600 V
- Operating Temperature -40°C ~ 150°C (TJ)
- Power Dissipation (Max) 500W (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 12V
- Package / Case 22-PowerBSOP Module
- Supplier Device Package PG-HDSOP-22
- Rds On (Max) @ Id, Vgs 17mOhm @ 29A, 12V
- Vgs(th) (Max) @ Id 4.5V @ 1.89mA
- Gate Charge (Qg) (Max) @ Vgs 196 nC @ 12 V
- Input Capacitance (Ciss) (Max) @ Vds 7370 pF @ 300 V
