GT1K2P15D5
Goford Semiconductor
IPQC60T022S7XTMA1
Part Number：
IPQC60T022S7XTMA1
Category：
Single FETs, MOSFETs
Manufacturer：
Infineon Technologies
Description：
HIGH POWER_NEW
Packaging：
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Vgs (Max) ±20V
- FET Feature -
- Grade -
- Qualification -
- Operating Temperature -55°C ~ 150°C (TJ)
- Drain to Source Voltage (Vdss) 600 V
- Current - Continuous Drain (Id) @ 25°C 90A (Tc)
- Power Dissipation (Max) 416W (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 12V
- Rds On (Max) @ Id, Vgs 22mOhm @ 23A, 12V
- Gate Charge (Qg) (Max) @ Vgs 150 nC @ 12 V
- Supplier Device Package PG-HDSOP-22-1
- Package / Case 22-PowerBSOP Module
- Input Capacitance (Ciss) (Max) @ Vds 5640 pF @ 300 V
- Vgs(th) (Max) @ Id 4.5V @ 1.43mA
