GT1K2P15D5
Goford Semiconductor
IPTC039N15NM5ATMA1
Part Number：
IPTC039N15NM5ATMA1
Category：
Single FETs, MOSFETs
Manufacturer：
Infineon Technologies
Description：
OPTIMOS 5 POWER MOSFET
Packaging：
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Vgs (Max) ±20V
- FET Feature -
- Operating Temperature -55°C ~ 175°C (TJ)
- Grade -
- Qualification -
- Drain to Source Voltage (Vdss) 150 V
- Gate Charge (Qg) (Max) @ Vgs 93 nC @ 10 V
- Drive Voltage (Max Rds On, Min Rds On) 8V, 10V
- Input Capacitance (Ciss) (Max) @ Vds 7300 pF @ 75 V
- Rds On (Max) @ Id, Vgs 3.9mOhm @ 50A, 10V
- Supplier Device Package PG-HDSOP-16-2
- Package / Case 16-PowerSOP Module
- Current - Continuous Drain (Id) @ 25°C 21A (Ta), 190A (Tc)
- Power Dissipation (Max) 3.8W (Ta), 319W (Tc)
- Vgs(th) (Max) @ Id 4.6V @ 243µA
