GT1K2P15D5
Goford Semiconductor
IQD020N10NM5SCATMA1
Part Number：
IQD020N10NM5SCATMA1
Category：
Single FETs, MOSFETs
Manufacturer：
Infineon Technologies
Description：
OPTIMOS POWER MOSFETS 25 V - 150
Packaging：
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
Specifications
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 100 V
- Vgs (Max) ±20V
- FET Feature -
- Operating Temperature -55°C ~ 175°C (TJ)
- Grade -
- Qualification -
- Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
- Gate Charge (Qg) (Max) @ Vgs 134 nC @ 10 V
- Package / Case 8-PowerWDFN
- Input Capacitance (Ciss) (Max) @ Vds 9500 pF @ 50 V
- Vgs(th) (Max) @ Id 3.8V @ 159µA
- Power Dissipation (Max) 3W (Ta), 333W (Tc)
- Rds On (Max) @ Id, Vgs 2.05mOhm @ 50A, 10V
- Current - Continuous Drain (Id) @ 25°C 26A (Ta), 276A (Tc)
- Supplier Device Package PG-WHSON-8-U02
