GT1K2P15D5
Goford Semiconductor
IRF820
Part Number：
IRF820
Category：
Single FETs, MOSFETs
Manufacturer：
Harris Corporation
Description：
2.5A, 500V, 3.000 OHM, N-CHANNEL
Packaging：
Bulk
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Mounting Type Through Hole
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs(th) (Max) @ Id 4V @ 250µA
- FET Feature -
- Grade -
- Qualification -
- Supplier Device Package TO-220AB
- Package / Case TO-220-3
- Current - Continuous Drain (Id) @ 25°C 4A (Tc)
- Drain to Source Voltage (Vdss) 500 V
- Rds On (Max) @ Id, Vgs 3Ohm @ 1.5A, 10V
- Gate Charge (Qg) (Max) @ Vgs 17 nC @ 10 V
- Operating Temperature 150°C (TJ)
- Vgs (Max) ±30V
- Power Dissipation (Max) 80W (Tc)
- Input Capacitance (Ciss) (Max) @ Vds 315 pF @ 25 V
