GT1K2P15D5
Goford Semiconductor
IRFD110
Part Number：
IRFD110
Category：
Single FETs, MOSFETs
Manufacturer：
Harris Corporation
Description：
1A, 100V, 0.600 OHM, N-CHANNEL
Packaging：
Bulk
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Mounting Type Through Hole
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 100 V
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs(th) (Max) @ Id 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 8.3 nC @ 10 V
- Vgs (Max) ±20V
- Input Capacitance (Ciss) (Max) @ Vds 180 pF @ 25 V
- FET Feature -
- Operating Temperature -55°C ~ 175°C (TJ)
- Grade -
- Qualification -
- Package / Case 4-DIP (0.300", 7.62mm)
- Current - Continuous Drain (Id) @ 25°C 1A (Ta)
- Rds On (Max) @ Id, Vgs 540mOhm @ 600mA, 10V
- Power Dissipation (Max) 1.3W (Ta)
- Supplier Device Package 4-DIP, Hexdip, HVMDIP
