GT1K2P15D5
Goford Semiconductor
IRFD123
Part Number：
IRFD123
Category：
Single FETs, MOSFETs
Manufacturer：
Harris Corporation
Description：
MOSFET N-CH 100V 1.3A 4DIP
Packaging：
Tube
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Obsolete
- Mounting Type Through Hole
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 100 V
- Vgs(th) (Max) @ Id 4V @ 250µA
- FET Feature -
- Supplier Device Package 4-HVMDIP
- Package / Case 4-DIP (0.300", 7.62mm)
- Input Capacitance (Ciss) (Max) @ Vds 360 pF @ 25 V
- Current - Continuous Drain (Id) @ 25°C 1.3A (Ta)
- Rds On (Max) @ Id, Vgs 270mOhm @ 780mA, 10V
- Gate Charge (Qg) (Max) @ Vgs 16 nC @ 10 V
