GT1K2P15D5
Goford Semiconductor
IRFH4210DTRPBF
Part Number：
IRFH4210DTRPBF
Category：
Single FETs, MOSFETs
Manufacturer：
International Rectifier
Description：
HEXFET POWER MOSFET
Packaging：
Bulk
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Vgs (Max) ±20V
- FET Feature -
- Grade -
- Qualification -
- Operating Temperature -55°C ~ 150°C (TJ)
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Drain to Source Voltage (Vdss) 25 V
- Gate Charge (Qg) (Max) @ Vgs 77 nC @ 10 V
- Package / Case 8-PowerTDFN
- Supplier Device Package PQFN (5x6)
- Current - Continuous Drain (Id) @ 25°C 44A (Ta)
- Vgs(th) (Max) @ Id 2.1V @ 100µA
- Input Capacitance (Ciss) (Max) @ Vds 4812 pF @ 13 V
- Rds On (Max) @ Id, Vgs 1.1mOhm @ 50A, 10V
- Power Dissipation (Max) 3.5W (Ta), 125W (Tc)
