GT1K2P15D5
Goford Semiconductor
IRFU4105ZPBF-IR
Part Number：
IRFU4105ZPBF-IR
Category：
Single FETs, MOSFETs
Manufacturer：
International Rectifier
Description：
HEXFET N-CHANNEL POWER MOSFET
Packaging：
Bulk
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Mounting Type Through Hole
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs(th) (Max) @ Id 4V @ 250µA
- Vgs (Max) ±20V
- FET Feature -
- Operating Temperature -55°C ~ 175°C (TJ)
- Grade -
- Qualification -
- Current - Continuous Drain (Id) @ 25°C 30A (Tc)
- Power Dissipation (Max) 48W (Tc)
- Drain to Source Voltage (Vdss) 55 V
- Gate Charge (Qg) (Max) @ Vgs 27 nC @ 10 V
- Package / Case TO-251-3 Short Leads, IPAK, TO-251AA
- Supplier Device Package IPAK (TO-251AA)
- Rds On (Max) @ Id, Vgs 24.5mOhm @ 18A, 10V
- Input Capacitance (Ciss) (Max) @ Vds 740 pF @ 25 V
