GT1K2P15D5
Goford Semiconductor
IRLU3636PBF
Part Number：
IRLU3636PBF
Category：
Single FETs, MOSFETs
Manufacturer：
International Rectifier
Description：
IRLU3636 - 12V-300V N-CHANNEL PO
Packaging：
Bulk
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Mounting Type Through Hole
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- FET Feature -
- Operating Temperature -55°C ~ 175°C (TJ)
- Grade -
- Qualification -
- Drain to Source Voltage (Vdss) 60 V
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Current - Continuous Drain (Id) @ 25°C 50A (Tc)
- Vgs (Max) ±16V
- Supplier Device Package IPAK
- Package / Case TO-251-3 Short Leads, IPAK, TO-251AA
- Gate Charge (Qg) (Max) @ Vgs 49 nC @ 4.5 V
- Vgs(th) (Max) @ Id 2.5V @ 100µA
- Power Dissipation (Max) 143W (Tc)
- Rds On (Max) @ Id, Vgs 6.8mOhm @ 50A, 10V
- Input Capacitance (Ciss) (Max) @ Vds 3779 pF @ 50 V
