GT1K2P15D5
Goford Semiconductor
ISZ106N12LM6ATMA1
Part Number：
ISZ106N12LM6ATMA1
Category：
Single FETs, MOSFETs
Manufacturer：
Infineon Technologies
Description：
OPTIMOS 6 POWER-TRANSISTOR,120V
Packaging：
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Vgs (Max) ±20V
- FET Feature -
- Operating Temperature -55°C ~ 175°C (TJ)
- Grade -
- Qualification -
- Gate Charge (Qg) (Max) @ Vgs 26 nC @ 10 V
- Drain to Source Voltage (Vdss) 120 V
- Package / Case 8-PowerTDFN
- Vgs(th) (Max) @ Id 2.2V @ 35µA
- Drive Voltage (Max Rds On, Min Rds On) 3.3V, 10V
- Supplier Device Package PG-TSDSON-8 FL
- Current - Continuous Drain (Id) @ 25°C 10A (Ta), 62A (Tc)
- Rds On (Max) @ Id, Vgs 10.6mOhm @ 28A, 10V
- Input Capacitance (Ciss) (Max) @ Vds 1800 pF @ 60 V
- Power Dissipation (Max) 2.5W (Ta), 94W (Tc)
