GT1K2P15D5
Goford Semiconductor
ISZ810P06LMATMA1
Part Number：
ISZ810P06LMATMA1
Category：
Single FETs, MOSFETs
Manufacturer：
Infineon Technologies
Description：
TRENCH 40<-<100V
Packaging：
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- Mounting Type Surface Mount
- Technology MOSFET (Metal Oxide)
- Vgs (Max) ±20V
- FET Feature -
- Operating Temperature -55°C ~ 175°C (TJ)
- Grade -
- Qualification -
- FET Type P-Channel
- Drain to Source Voltage (Vdss) 60 V
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Power Dissipation (Max) 83W (Tc)
- Package / Case 8-PowerTDFN
- Current - Continuous Drain (Id) @ 25°C 19.5A (Tc)
- Input Capacitance (Ciss) (Max) @ Vds 1400 pF @ 30 V
- Gate Charge (Qg) (Max) @ Vgs 42.8 nC @ 10 V
- Supplier Device Package PG-TSDSON-8-26
- Vgs(th) (Max) @ Id 2V @ 724µA
