GT1K2P15D5
Goford Semiconductor
IXFE180N10
Part Number：
IXFE180N10
Category：
Single FETs, MOSFETs
Manufacturer：
IXYS
Description：
MOSFET N-CH 100V 176A SOT227B
Packaging：
Tube
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Obsolete
- Mounting Type Chassis Mount
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 100 V
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±20V
- FET Feature -
- Grade -
- Qualification -
- Operating Temperature -55°C ~ 150°C (TJ)
- Vgs(th) (Max) @ Id 4V @ 8mA
- Power Dissipation (Max) 500W (Tc)
- Gate Charge (Qg) (Max) @ Vgs 360 nC @ 10 V
- Supplier Device Package SOT-227B
- Package / Case SOT-227-4, miniBLOC
- Input Capacitance (Ciss) (Max) @ Vds 9100 pF @ 25 V
- Rds On (Max) @ Id, Vgs 8mOhm @ 90A, 10V
- Current - Continuous Drain (Id) @ 25°C 176A (Tc)
