GT1K2P15D5
Goford Semiconductor
IXFT60N65X2HV
Part Number：
IXFT60N65X2HV
Category：
Single FETs, MOSFETs
Manufacturer：
IXYS
Description：
MOSFET N-CH 650V 60A TO268HV
Packaging：
Tube
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- FET Feature -
- Grade -
- Qualification -
- Operating Temperature -55°C ~ 150°C (TJ)
- Vgs (Max) ±30V
- Package / Case TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
- Drain to Source Voltage (Vdss) 650 V
- Current - Continuous Drain (Id) @ 25°C 60A (Tc)
- Vgs(th) (Max) @ Id 5V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs 108 nC @ 10 V
- Power Dissipation (Max) 780W (Tc)
- Input Capacitance (Ciss) (Max) @ Vds 6300 pF @ 25 V
- Rds On (Max) @ Id, Vgs 52mOhm @ 30A, 10V
- Supplier Device Package TO-268HV (IXFT)
