GT1K2P15D5
Goford Semiconductor
IXFX20N80Q
Part Number：
IXFX20N80Q
Category：
Single FETs, MOSFETs
Manufacturer：
IXYS
Description：
MOSFET N-CH 800V 20A PLUS247-3
Packaging：
Tube
ROHS Status:
Yes
Currency:
USD
Specifications
- Part Status Obsolete
- Mounting Type Through Hole
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±20V
- FET Feature -
- Grade -
- Qualification -
- Operating Temperature -55°C ~ 150°C (TJ)
- Current - Continuous Drain (Id) @ 25°C 20A (Tc)
- Drain to Source Voltage (Vdss) 800 V
- Gate Charge (Qg) (Max) @ Vgs 200 nC @ 10 V
- Power Dissipation (Max) 360W (Tc)
- Vgs(th) (Max) @ Id 4.5V @ 4mA
- Supplier Device Package PLUS247™-3
- Package / Case TO-247-3 Variant
- Rds On (Max) @ Id, Vgs 420mOhm @ 10A, 10V
- Input Capacitance (Ciss) (Max) @ Vds 5100 pF @ 25 V
