GT1K2P15D5
Goford Semiconductor
IXTF1R4N450
Part Number：
IXTF1R4N450
Category：
Single FETs, MOSFETs
Manufacturer：
IXYS
Description：
MOSFET N-CH 4500V 1.4A I4PAC
Packaging：
Tube
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Mounting Type Through Hole
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±20V
- FET Feature -
- Grade -
- Qualification -
- Operating Temperature -55°C ~ 150°C (TJ)
- Power Dissipation (Max) 190W (Tc)
- Current - Continuous Drain (Id) @ 25°C 1.4A (Tc)
- Input Capacitance (Ciss) (Max) @ Vds 3300 pF @ 25 V
- Gate Charge (Qg) (Max) @ Vgs 88 nC @ 10 V
- Package / Case i4-Pac™-5 (3 Leads)
- Supplier Device Package ISOPLUS i4-PAC™
- Vgs(th) (Max) @ Id 6V @ 250µA
- Drain to Source Voltage (Vdss) 4500 V
- Rds On (Max) @ Id, Vgs 40Ohm @ 50mA, 10V
