GT1K2P15D5
Goford Semiconductor
IXTF6N200P3
Part Number：
IXTF6N200P3
Category：
Single FETs, MOSFETs
Manufacturer：
IXYS
Description：
MOSFET N-CH 2000V 4A I4PAC
Packaging：
Tube
ROHS Status:
Yes
Currency:
USD
Specifications
- Mounting Type Through Hole
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±20V
- FET Feature -
- Grade -
- Qualification -
- Operating Temperature -55°C ~ 150°C (TJ)
- Current - Continuous Drain (Id) @ 25°C 4A (Tc)
- Vgs(th) (Max) @ Id 5V @ 250µA
- Input Capacitance (Ciss) (Max) @ Vds 3700 pF @ 25 V
- Power Dissipation (Max) 215W (Tc)
- Supplier Device Package ISOPLUS i4-PAC™
- Package / Case ISOPLUSi5-PAK™
- Gate Charge (Qg) (Max) @ Vgs 143 nC @ 10 V
- Drain to Source Voltage (Vdss) 2000 V
- Rds On (Max) @ Id, Vgs 4.2Ohm @ 3A, 10V
