GT1K2P15D5
Goford Semiconductor
IXTH36P10
Part Number：
IXTH36P10
Category：
Single FETs, MOSFETs
Manufacturer：
IXYS
Description：
MOSFET P-CH 100V 36A TO247
Packaging：
Tube
ROHS Status:
Yes
Currency:
USD
Specifications
- Part Status Obsolete
- Mounting Type Through Hole
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 100 V
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±20V
- FET Feature -
- Grade -
- Qualification -
- Operating Temperature -55°C ~ 150°C (TJ)
- FET Type P-Channel
- Package / Case TO-247-3
- Power Dissipation (Max) 180W (Tc)
- Input Capacitance (Ciss) (Max) @ Vds 2800 pF @ 25 V
- Supplier Device Package TO-247 (IXTH)
- Current - Continuous Drain (Id) @ 25°C 36A (Tc)
- Gate Charge (Qg) (Max) @ Vgs 95 nC @ 10 V
- Vgs(th) (Max) @ Id 5V @ 250µA
- Rds On (Max) @ Id, Vgs 75mOhm @ 18A, 10V
