GT1K2P15D5
Goford Semiconductor
IXTP75N10P
Part Number：
IXTP75N10P
Category：
Single FETs, MOSFETs
Manufacturer：
IXYS
Description：
MOSFET N-CH 100V 75A TO220AB
Packaging：
Tube
ROHS Status:
Yes
Currency:
USD
Specifications
- Mounting Type Through Hole
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 100 V
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±20V
- FET Feature -
- Operating Temperature -55°C ~ 175°C (TJ)
- Grade -
- Qualification -
- Package / Case TO-220-3
- Supplier Device Package TO-220-3
- Current - Continuous Drain (Id) @ 25°C 75A (Tc)
- Power Dissipation (Max) 360W (Tc)
- Gate Charge (Qg) (Max) @ Vgs 74 nC @ 10 V
- Vgs(th) (Max) @ Id 5.5V @ 250µA
- Input Capacitance (Ciss) (Max) @ Vds 2250 pF @ 25 V
- Rds On (Max) @ Id, Vgs 25mOhm @ 500mA, 10V
