GT1K2P15D5
Goford Semiconductor
IXTU02N50D
Part Number：
IXTU02N50D
Category：
Single FETs, MOSFETs
Manufacturer：
IXYS
Description：
MOSFET N-CH 500V 200MA TO251
Packaging：
Tube
ROHS Status:
Yes
Currency:
USD
Specifications
- Part Status Obsolete
- Mounting Type Through Hole
- Technology MOSFET (Metal Oxide)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±20V
- FET Feature -
- Grade -
- Qualification -
- Operating Temperature -55°C ~ 150°C (TJ)
- Drain to Source Voltage (Vdss) 500 V
- Input Capacitance (Ciss) (Max) @ Vds 120 pF @ 25 V
- Package / Case TO-251-3 Short Leads, IPAK, TO-251AA
- Supplier Device Package TO-251AA
- FET Type N-Channel, Depletion Mode
- Power Dissipation (Max) 1.1W (Ta), 25W (Tc)
- Current - Continuous Drain (Id) @ 25°C 200mA (Tc)
- Vgs(th) (Max) @ Id 5V @ 25µA
- Rds On (Max) @ Id, Vgs 30Ohm @ 50mA, 0V
