GT1K2P15D5
Goford Semiconductor
LND150N3-G-P014
Part Number：
LND150N3-G-P014
Category：
Single FETs, MOSFETs
Manufacturer：
Microchip Technology
Description：
MOSFET N-CH 500V 30MA TO92-3
Packaging：
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Mounting Type Through Hole
- Part Status Active
- Technology MOSFET (Metal Oxide)
- Vgs (Max) ±20V
- FET Feature -
- Grade -
- Qualification -
- Package / Case TO-226-3, TO-92-3 (TO-226AA)
- Operating Temperature -55°C ~ 150°C (TJ)
- Supplier Device Package TO-92-3
- Drain to Source Voltage (Vdss) 500 V
- Vgs(th) (Max) @ Id -
- FET Type N-Channel, Depletion Mode
- Drive Voltage (Max Rds On, Min Rds On) 0V
- Power Dissipation (Max) 740mW (Ta)
- Current - Continuous Drain (Id) @ 25°C 30mA (Tj)
- Rds On (Max) @ Id, Vgs 1000Ohm @ 500µA, 0V
- Input Capacitance (Ciss) (Max) @ Vds 10 pF @ 25 V
