GT1K2P15D5
Goford Semiconductor
LSIC1MO170E1000
Part Number：
LSIC1MO170E1000
Category：
Single FETs, MOSFETs
Manufacturer：
Littelfuse Inc.
Description：
SICFET N-CH 1700V 5A TO247-3L
Packaging：
Tube
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Obsolete
- Mounting Type Through Hole
- FET Type N-Channel
- FET Feature -
- Grade -
- Qualification -
- Operating Temperature -55°C ~ 150°C (TJ)
- Package / Case TO-247-3
- Power Dissipation (Max) 54W (Tc)
- Supplier Device Package TO-247AD
- Current - Continuous Drain (Id) @ 25°C 5A (Tc)
- Vgs(th) (Max) @ Id 4V @ 1mA
- Technology SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss) 1700 V
- Vgs (Max) +22V, -6V
- Input Capacitance (Ciss) (Max) @ Vds 200 pF @ 1000 V
- Drive Voltage (Max Rds On, Min Rds On) 15V, 20V
- Rds On (Max) @ Id, Vgs 1Ohm @ 2A, 20V
- Gate Charge (Qg) (Max) @ Vgs 15 nC @ 20 V
