GT1K2P15D5
Goford Semiconductor
MCB011N10YLHE3-TP
Part Number：
MCB011N10YLHE3-TP
Category：
Single FETs, MOSFETs
Manufacturer：
MCC (Micro Commercial Components)
Description：
N-CHANNEL MOSFET,D2-PAK
Packaging：
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 100 V
- Vgs (Max) ±20V
- FET Feature -
- Operating Temperature -55°C ~ 175°C (TJ)
- Grade Automotive
- Qualification AEC-Q101
- Vgs(th) (Max) @ Id 2.5V @ 250µA
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package D2PAK
- Rds On (Max) @ Id, Vgs 11mOhm @ 20A, 10V
- Current - Continuous Drain (Id) @ 25°C 63A (Tc)
- Power Dissipation (Max) 100W (Tj)
- Gate Charge (Qg) (Max) @ Vgs 29.8 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 1404 pF @ 50 V
