GT1K2P15D5
Goford Semiconductor
MCG18P06YHE3-TP
Part Number：
MCG18P06YHE3-TP
Category：
Single FETs, MOSFETs
Manufacturer：
MCC (Micro Commercial Components)
Description：
POWER MOSFET
Packaging：
Tape & Reel (TR)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Obsolete
- Mounting Type Surface Mount
- Technology MOSFET (Metal Oxide)
- Vgs (Max) ±20V
- FET Feature -
- Operating Temperature -55°C ~ 150°C (TJ)
- Grade Automotive
- Qualification AEC-Q101
- FET Type P-Channel
- Drain to Source Voltage (Vdss) 60 V
- Vgs(th) (Max) @ Id 2.5V @ 250µA
- Current - Continuous Drain (Id) @ 25°C 18A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Input Capacitance (Ciss) (Max) @ Vds 830 pF @ 25 V
- Package / Case 8-PowerVDFN
- Rds On (Max) @ Id, Vgs 45mOhm @ 15A, 10V
- Gate Charge (Qg) (Max) @ Vgs 14.1 nC @ 10 V
- Power Dissipation (Max) 42W (Tj)
- Supplier Device Package PDFN3333
