MCG55P02A-TP

MCG55P02A-TP

Part Number: MCG55P02A-TP
Category: Single FETs, MOSFETs
Description: P-CHANNEL MOSFET, DFN3333
Packaging: Cut Tape (CT)
ROHS Status: Yes
Currency: USD
PDF: Documents

Specifications

  • Part Status Active
  • Mounting Type Surface Mount
  • Technology MOSFET (Metal Oxide)
  • FET Feature -
  • Grade -
  • Qualification -
  • Operating Temperature -55°C ~ 150°C (TJ)
  • FET Type P-Channel
  • Vgs (Max) ±10V
  • Vgs(th) (Max) @ Id 1V @ 250µA
  • Drain to Source Voltage (Vdss) 20 V
  • Package / Case 8-VDFN Exposed Pad
  • Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
  • Gate Charge (Qg) (Max) @ Vgs 149 nC @ 10 V
  • Power Dissipation (Max) 3.2W (Ta), 38W (Tc)
  • Current - Continuous Drain (Id) @ 25°C 55A
  • Supplier Device Package DFN3333
  • Rds On (Max) @ Id, Vgs 8.3mOhm @ 15A, 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds 6358 pF @ 10 V