GT1K2P15D5
Goford Semiconductor
MCQ12N03HE3-TP
Part Number：
MCQ12N03HE3-TP
Category：
Single FETs, MOSFETs
Manufacturer：
MCC (Micro Commercial Components)
Description：
POWER MOSFET
Packaging：
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- Mounting Type Surface Mount
- Package / Case 8-SOIC (0.154", 3.90mm Width)
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Vgs (Max) ±20V
- FET Feature -
- Operating Temperature -55°C ~ 150°C (TJ)
- Grade Automotive
- Qualification AEC-Q101
- Gate Charge (Qg) (Max) @ Vgs 22 nC @ 10 V
- Vgs(th) (Max) @ Id 2.5V @ 250µA
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Drain to Source Voltage (Vdss) 30 V
- Supplier Device Package 8-SOP
- Current - Continuous Drain (Id) @ 25°C 12A (Ta)
- Rds On (Max) @ Id, Vgs 6.5mOhm @ 12A, 10V
- Power Dissipation (Max) 1.9W (Tj)
- Input Capacitance (Ciss) (Max) @ Vds 978 pF @ 25 V
