GT1K2P15D5
Goford Semiconductor
MMIX1T660N04T4
Part Number：
MMIX1T660N04T4
Category：
Single FETs, MOSFETs
Manufacturer：
IXYS
Description：
MOSFET N-CH 40V 660A 24SMPD
Packaging：
Tube
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Obsolete
- Mounting Type Surface Mount
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs(th) (Max) @ Id 4V @ 250µA
- FET Feature -
- Operating Temperature -55°C ~ 175°C (TJ)
- Grade -
- Qualification -
- Drain to Source Voltage (Vdss) 40 V
- Vgs (Max) ±15V
- Power Dissipation (Max) 830W (Tc)
- Supplier Device Package 24-SMPD
- Package / Case 24-PowerSMD, 21 Leads
- Current - Continuous Drain (Id) @ 25°C 660A (Tc)
- Rds On (Max) @ Id, Vgs 0.85mOhm @ 100A, 10V
- Gate Charge (Qg) (Max) @ Vgs 860 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 44000 pF @ 25 V
