GT1K2P15D5
Goford Semiconductor
MSC360SMA120B
Part Number：
MSC360SMA120B
Category：
Single FETs, MOSFETs
Manufacturer：
Microchip Technology
Description：
MOSFET SIC 1200 V 360 MOHM TO-24
Packaging：
Tube
ROHS Status:
Yes
Currency:
USD
Specifications
- Mounting Type Through Hole
- Part Status Active
- FET Type N-Channel
- FET Feature -
- Operating Temperature -55°C ~ 175°C (TJ)
- Grade -
- Qualification -
- Current - Continuous Drain (Id) @ 25°C 11A (Tc)
- Package / Case TO-247-3
- Supplier Device Package TO-247-3
- Drain to Source Voltage (Vdss) 1200 V
- Power Dissipation (Max) 78W (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 20V
- Technology SiCFET (Silicon Carbide)
- Gate Charge (Qg) (Max) @ Vgs 21 nC @ 20 V
- Vgs (Max) +23V, -10V
- Rds On (Max) @ Id, Vgs 450mOhm @ 5A, 20V
- Vgs(th) (Max) @ Id 3.14V @ 500µA (Typ)
- Input Capacitance (Ciss) (Max) @ Vds 255 pF @ 1000 V
