GT1K2P15D5
Goford Semiconductor
NP88N055KHE-E1-AY
Part Number：
NP88N055KHE-E1-AY
Category：
Single FETs, MOSFETs
Manufacturer：
Renesas Electronics Corporation
Description：
N-CHANNEL POWER MOSFET
Packaging：
Bulk
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs(th) (Max) @ Id 4V @ 250µA
- Vgs (Max) ±20V
- FET Feature -
- Grade -
- Qualification -
- Gate Charge (Qg) (Max) @ Vgs 200 nC @ 10 V
- Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Drain to Source Voltage (Vdss) 55 V
- Supplier Device Package TO-263-3
- Input Capacitance (Ciss) (Max) @ Vds 11400 pF @ 25 V
- Operating Temperature 175°C
- Power Dissipation (Max) 1.8W (Ta), 288W (Tc)
- Rds On (Max) @ Id, Vgs 3.9mOhm @ 44A, 10V
- Current - Continuous Drain (Id) @ 25°C 88A
