GT1K2P15D5
Goford Semiconductor
NTBG023N065M3S
Part Number：
NTBG023N065M3S
Category：
Single FETs, MOSFETs
Manufacturer：
onsemi
Description：
SIC MOS D2PAK-7L 23MOHM 650V M3S
Packaging：
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- FET Feature -
- Operating Temperature -55°C ~ 175°C (TJ)
- Grade -
- Qualification -
- Package / Case TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
- Current - Continuous Drain (Id) @ 25°C 40A (Tc)
- Drain to Source Voltage (Vdss) 650 V
- Supplier Device Package D2PAK-7
- Power Dissipation (Max) 263W (Tc)
- Vgs(th) (Max) @ Id 4V @ 10mA
- Technology SiCFET (Silicon Carbide)
- Drive Voltage (Max Rds On, Min Rds On) 15V, 18V
- Vgs (Max) +22V, -8V
- Rds On (Max) @ Id, Vgs 33mOhm @ 20A, 18V
- Gate Charge (Qg) (Max) @ Vgs 69 nC @ 18 V
- Input Capacitance (Ciss) (Max) @ Vds 1951 pF @ 400 V
