GT1K2P15D5
Goford Semiconductor
NTH4L018N075SC1
Part Number：
NTH4L018N075SC1
Category：
Single FETs, MOSFETs
Manufacturer：
onsemi
Description：
SIC MOS TO247-4L 750V
Packaging：
Tube
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Mounting Type Through Hole
- Part Status Active
- FET Type N-Channel
- FET Feature -
- Operating Temperature -55°C ~ 175°C (TJ)
- Grade -
- Qualification -
- Power Dissipation (Max) 500W (Tc)
- Current - Continuous Drain (Id) @ 25°C 140A (Tc)
- Package / Case TO-247-4
- Technology SiCFET (Silicon Carbide)
- Supplier Device Package TO-247-4
- Drive Voltage (Max Rds On, Min Rds On) 15V, 18V
- Drain to Source Voltage (Vdss) 750 V
- Vgs (Max) +22V, -8V
- Rds On (Max) @ Id, Vgs 18mOhm @ 66A, 18V
- Vgs(th) (Max) @ Id 4.3V @ 22mA
- Gate Charge (Qg) (Max) @ Vgs 262 nC @ 18 V
- Input Capacitance (Ciss) (Max) @ Vds 5010 pF @ 375 V
