GT1K2P15D5
Goford Semiconductor
NTMT045N065SC1
Part Number：
NTMT045N065SC1
Category：
Single FETs, MOSFETs
Manufacturer：
onsemi
Description：
SILICON CARBIDE (SIC) MOSFET - 3
Packaging：
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- FET Feature -
- Operating Temperature -55°C ~ 175°C (TJ)
- Grade -
- Qualification -
- Current - Continuous Drain (Id) @ 25°C 55A (Tc)
- Drain to Source Voltage (Vdss) 650 V
- Power Dissipation (Max) 187W (Tc)
- Technology SiCFET (Silicon Carbide)
- Package / Case 4-PowerTSFN
- Drive Voltage (Max Rds On, Min Rds On) 15V, 18V
- Supplier Device Package 4-TDFN (8x8)
- Vgs (Max) +22V, -8V
- Rds On (Max) @ Id, Vgs 50mOhm @ 25A, 18V
- Vgs(th) (Max) @ Id 4.3V @ 8mA
- Gate Charge (Qg) (Max) @ Vgs 105 nC @ 18 V
- Input Capacitance (Ciss) (Max) @ Vds 1870 pF @ 325 V
