GT1K2P15D5
Goford Semiconductor
NTTFS115P10M5
Part Number：
NTTFS115P10M5
Category：
Single FETs, MOSFETs
Manufacturer：
onsemi
Description：
MV5_100V_N_P_IN DUALS AND SINGLE
Packaging：
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- Mounting Type Surface Mount
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 100 V
- Vgs (Max) ±20V
- FET Feature -
- Grade -
- Qualification -
- Operating Temperature -55°C ~ 150°C (TJ)
- FET Type P-Channel
- Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
- Gate Charge (Qg) (Max) @ Vgs 9.2 nC @ 10 V
- Package / Case 8-PowerWDFN
- Supplier Device Package 8-WDFN (3.3x3.3)
- Vgs(th) (Max) @ Id 4V @ 45µA
- Rds On (Max) @ Id, Vgs 120mOhm @ 2.4A, 10V
- Current - Continuous Drain (Id) @ 25°C 2A (Ta), 13A (Tc)
- Input Capacitance (Ciss) (Max) @ Vds 637 pF @ 50 V
- Power Dissipation (Max) 900mW (Ta), 41W (Tc)
