GT1K2P15D5
Goford Semiconductor
NVD260N65S3
Part Number：
NVD260N65S3
Category：
Single FETs, MOSFETs
Manufacturer：
onsemi
Description：
SINGLE N-CHANNEL POWER MOSFET SU
Packaging：
Bulk
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Discontinued at
- Mounting Type Surface Mount
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- FET Feature -
- Operating Temperature -55°C ~ 150°C (TJ)
- Grade Automotive
- Qualification AEC-Q101
- Current - Continuous Drain (Id) @ 25°C 12A (Tc)
- Supplier Device Package DPAK
- Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
- Vgs (Max) ±30V
- Drain to Source Voltage (Vdss) 650 V
- Power Dissipation (Max) 90W (Tc)
- Gate Charge (Qg) (Max) @ Vgs 23.5 nC @ 10 V
- Rds On (Max) @ Id, Vgs 260mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id 4.5V @ 290µA
- Input Capacitance (Ciss) (Max) @ Vds 1042 pF @ 400 V
