GT1K2P15D5
Goford Semiconductor
NVMFWS004N10MCT1G
Part Number：
NVMFWS004N10MCT1G
Category：
Single FETs, MOSFETs
Manufacturer：
onsemi
Description：
MOSFET N-CH 100V 5DFN
Packaging：
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 100 V
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±20V
- FET Feature -
- Operating Temperature -55°C ~ 175°C (TJ)
- Grade Automotive
- Qualification AEC-Q101
- Gate Charge (Qg) (Max) @ Vgs 48 nC @ 10 V
- Vgs(th) (Max) @ Id 4V @ 270µA
- Package / Case 8-PowerTDFN, 5 Leads
- Mounting Type Surface Mount, Wettable Flank
- Supplier Device Package 5-DFNW (4.9x5.9) (8-SOFL-WF)
- Input Capacitance (Ciss) (Max) @ Vds 3600 pF @ 50 V
- Current - Continuous Drain (Id) @ 25°C 21A (Ta), 138A (Tc)
- Rds On (Max) @ Id, Vgs 3.9mOhm @ 48A, 10V
- Power Dissipation (Max) 3.8W (Ta), 164W (Tc)
