GT1K2P15D5
Goford Semiconductor
NVNJWS1K6N061LTAG
Part Number：
NVNJWS1K6N061LTAG
Category：
Single FETs, MOSFETs
Manufacturer：
onsemi
Description：
MOSFET - POWER, N-CHANNEL WITH E
Packaging：
Bulk
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Discontinued at
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Vgs (Max) ±20V
- FET Feature -
- Operating Temperature -55°C ~ 175°C (TJ)
- Grade Automotive
- Qualification AEC-Q101
- Drain to Source Voltage (Vdss) 60 V
- Vgs(th) (Max) @ Id 2.5V @ 250µA
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Package / Case 3-XFDFN
- Rds On (Max) @ Id, Vgs 1.6Ohm @ 500mA, 10V
- Mounting Type Surface Mount, Wettable Flank
- Gate Charge (Qg) (Max) @ Vgs 0.9 nC @ 4.5 V
- Supplier Device Package 3-XDFNW (1x1)
- Current - Continuous Drain (Id) @ 25°C 632mA (Ta), 853mA (Tc)
- Input Capacitance (Ciss) (Max) @ Vds 26 pF @ 20 V
- Power Dissipation (Max) 1.437W (Ta), 2.617W (Tc)
