GT1K2P15D5
Goford Semiconductor
NVNJWS5K0P061LTAG
Part Number：
NVNJWS5K0P061LTAG
Category：
Single FETs, MOSFETs
Manufacturer：
onsemi
Description：
MOSFET - POWER, P-CHANNEL WITH E
Packaging：
Bulk
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Discontinued at
- Technology MOSFET (Metal Oxide)
- Vgs (Max) ±20V
- FET Feature -
- Operating Temperature -55°C ~ 175°C (TJ)
- Grade Automotive
- Qualification AEC-Q101
- FET Type P-Channel
- Drain to Source Voltage (Vdss) 60 V
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Vgs(th) (Max) @ Id 3V @ 250µA
- Package / Case 3-XFDFN
- Mounting Type Surface Mount, Wettable Flank
- Rds On (Max) @ Id, Vgs 5Ohm @ 100mA, 10V
- Input Capacitance (Ciss) (Max) @ Vds 29 pF @ 25 V
- Supplier Device Package 3-XDFNW (1x1)
- Power Dissipation (Max) 1.437W (Ta), 2.617W (Tc)
- Current - Continuous Drain (Id) @ 25°C 357A (Ta), 482A (Tc)
- Gate Charge (Qg) (Max) @ Vgs 1 nC @ 25 V
