GT1K2P15D5
Goford Semiconductor
PHD108NQ03LT,118
Part Number：
PHD108NQ03LT,118
Category：
Single FETs, MOSFETs
Manufacturer：
NXP USA Inc.
Description：
MOSFET N-CH 25V 75A DPAK
Packaging：
Tape & Reel (TR)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Obsolete
- Mounting Type Surface Mount
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Vgs (Max) ±20V
- FET Feature -
- Operating Temperature -55°C ~ 175°C (TJ)
- Grade -
- Qualification -
- Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
- Supplier Device Package DPAK
- Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
- Vgs(th) (Max) @ Id 2V @ 1mA
- Current - Continuous Drain (Id) @ 25°C 75A (Tc)
- Drain to Source Voltage (Vdss) 25 V
- Power Dissipation (Max) 187W (Tc)
- Rds On (Max) @ Id, Vgs 6mOhm @ 25A, 10V
- Gate Charge (Qg) (Max) @ Vgs 16.3 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds 1375 pF @ 12 V
