GT1K2P15D5
Goford Semiconductor
PJD12P06-AU_L2_000A1
Part Number：
PJD12P06-AU_L2_000A1
Category：
Single FETs, MOSFETs
Manufacturer：
Panjit International Inc.
Description：
60V P-CHANNEL ENHANCEMENT MODE M
Packaging：
Tape & Reel (TR)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Mounting Type Surface Mount
- Technology MOSFET (Metal Oxide)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs(th) (Max) @ Id 4V @ 250µA
- Vgs (Max) ±20V
- FET Feature -
- Part Status Not For New Designs
- Operating Temperature -55°C ~ 150°C (TJ)
- Grade Automotive
- Qualification AEC-Q101
- FET Type P-Channel
- Drain to Source Voltage (Vdss) 60 V
- Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
- Supplier Device Package TO-252AA
- Power Dissipation (Max) 2W (Ta), 50W (Tc)
- Input Capacitance (Ciss) (Max) @ Vds 385 pF @ 25 V
- Gate Charge (Qg) (Max) @ Vgs 10.9 nC @ 10 V
- Current - Continuous Drain (Id) @ 25°C 2.6A (Ta), 12A (Tc)
- Rds On (Max) @ Id, Vgs 155mOhm @ 6A, 10V
