GT1K2P15D5
Goford Semiconductor
PJMP210N65EC_T0_00601
Part Number：
PJMP210N65EC_T0_00601
Category：
Single FETs, MOSFETs
Manufacturer：
Panjit International Inc.
Description：
650V/ 390MOHM / 10A/ EASY TO DRI
Packaging：
Tube
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Mounting Type Through Hole
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs(th) (Max) @ Id 4V @ 250µA
- FET Feature -
- Grade -
- Qualification -
- Package / Case TO-220-3
- Operating Temperature -55°C ~ 150°C (TJ)
- Current - Continuous Drain (Id) @ 25°C 19A (Tc)
- Power Dissipation (Max) 150W (Tc)
- Gate Charge (Qg) (Max) @ Vgs 34 nC @ 10 V
- Vgs (Max) ±30V
- Drain to Source Voltage (Vdss) 700 V
- Supplier Device Package TO-220AB-L
- Rds On (Max) @ Id, Vgs 210mOhm @ 9.5A, 10V
- Input Capacitance (Ciss) (Max) @ Vds 1412 pF @ 400 V
