GT1K2P15D5
Goford Semiconductor
PJQ1917_R1_00001
Part Number：
PJQ1917_R1_00001
Category：
Single FETs, MOSFETs
Manufacturer：
Panjit International Inc.
Description：
20V P-CHANNEL ENHANCEMENT MODE M
Packaging：
Tape & Reel (TR)
ROHS Status:
Yes
Currency:
USD
Specifications
- Mounting Type Surface Mount
- Technology MOSFET (Metal Oxide)
- FET Feature -
- Grade -
- Qualification -
- Part Status Not For New Designs
- Operating Temperature -55°C ~ 150°C (TJ)
- FET Type P-Channel
- Current - Continuous Drain (Id) @ 25°C 700mA (Ta)
- Power Dissipation (Max) 500mW (Ta)
- Vgs(th) (Max) @ Id 1V @ 250µA
- Drain to Source Voltage (Vdss) 20 V
- Vgs (Max) ±8V
- Package / Case 3-UFDFN
- Drive Voltage (Max Rds On, Min Rds On) 1.2V, 4.5V
- Gate Charge (Qg) (Max) @ Vgs 1.1 nC @ 4.5 V
- Rds On (Max) @ Id, Vgs 600mOhm @ 300mA, 4.5V
- Supplier Device Package DFN1006-3
- Input Capacitance (Ciss) (Max) @ Vds 51 pF @ 10 V
