GT1K2P15D5
Goford Semiconductor
PJW4P06A-AU_R2_000A1
Part Number：
PJW4P06A-AU_R2_000A1
Category：
Single FETs, MOSFETs
Manufacturer：
Panjit International Inc.
Description：
60V P-CHANNEL ENHANCEMENT MODE M
Packaging：
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- Mounting Type Surface Mount
- Technology MOSFET (Metal Oxide)
- Vgs (Max) ±20V
- FET Feature -
- Operating Temperature -55°C ~ 150°C (TJ)
- Grade Automotive
- Qualification AEC-Q101
- FET Type P-Channel
- Drain to Source Voltage (Vdss) 60 V
- Vgs(th) (Max) @ Id 2.5V @ 250µA
- Package / Case TO-261-4, TO-261AA
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Current - Continuous Drain (Id) @ 25°C 4A (Ta)
- Supplier Device Package SOT-223
- Gate Charge (Qg) (Max) @ Vgs 10 nC @ 10 V
- Power Dissipation (Max) 3.1W (Ta)
- Input Capacitance (Ciss) (Max) @ Vds 785 pF @ 30 V
- Rds On (Max) @ Id, Vgs 110mOhm @ 4A, 10V
