GT1K2P15D5
Goford Semiconductor
PJW5N10A_R2_00001
Part Number：
PJW5N10A_R2_00001
Category：
Single FETs, MOSFETs
Manufacturer：
Panjit International Inc.
Description：
100V N-CHANNEL ENHANCEMENT MODE
Packaging：
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 100 V
- Vgs (Max) ±20V
- FET Feature -
- Grade -
- Qualification -
- Operating Temperature -55°C ~ 150°C (TJ)
- Gate Charge (Qg) (Max) @ Vgs 20 nC @ 10 V
- Vgs(th) (Max) @ Id 2.5V @ 250µA
- Package / Case TO-261-4, TO-261AA
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Supplier Device Package SOT-223
- Input Capacitance (Ciss) (Max) @ Vds 1413 pF @ 25 V
- Current - Continuous Drain (Id) @ 25°C 3.5A (Ta), 5A (Tc)
- Rds On (Max) @ Id, Vgs 115mOhm @ 4A, 10V
- Power Dissipation (Max) 3.1W (Ta), 5.2W (Tc)
