GT1K2P15D5
Goford Semiconductor
PMH850UPEH
Part Number：
PMH850UPEH
Category：
Single FETs, MOSFETs
Manufacturer：
Nexperia USA Inc.
Description：
MOSFET P-CH 30V 600MA DFN0606-3
Packaging：
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Active
- Mounting Type Surface Mount
- Technology MOSFET (Metal Oxide)
- FET Feature -
- Grade -
- Qualification -
- Operating Temperature -55°C ~ 150°C (TJ)
- FET Type P-Channel
- Current - Continuous Drain (Id) @ 25°C 600mA (Ta)
- Drain to Source Voltage (Vdss) 30 V
- Vgs (Max) ±8V
- Vgs(th) (Max) @ Id 950mV @ 250µA
- Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
- Package / Case 3-XFDFN
- Gate Charge (Qg) (Max) @ Vgs 0.9 nC @ 4.5 V
- Supplier Device Package DFN0606-3
- Rds On (Max) @ Id, Vgs 1Ohm @ 500mA, 4.5V
- Input Capacitance (Ciss) (Max) @ Vds 62.2 pF @ 15 V
- Power Dissipation (Max) 660mW (Ta), 2.23W (Tc)
