English
English
Home
Classification
Brand
News
Inquiry
About Us
Contact Us
Copyright@2026 All Rights Reserved
Technical Support Cluster Technology
Sitemap
English
English
Home
Classification
Brand
News
Inquiry
About Us
Contact Us
Home
/
Products
/
PMN23UN,165
PMN23UN,165
Part Number:
PMN23UN,165
Category:
Single FETs, MOSFETs
Manufacturer:
NXP USA Inc.
Description:
MOSFET N-CH 20V 6.3A 6TSOP
Packaging:
Tape & Reel (TR)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Quantity
Add to RFQ
Specifications
Part Status
Obsolete
Mounting Type
Surface Mount
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
FET Feature
-
Grade
-
Qualification
-
Operating Temperature
-55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss)
20 V
Vgs (Max)
±8V
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V
Package / Case
SC-74, SOT-457
Supplier Device Package
SC-74
Vgs(th) (Max) @ Id
700mV @ 1mA (Typ)
Current - Continuous Drain (Id) @ 25°C
6.3A (Tc)
Rds On (Max) @ Id, Vgs
28mOhm @ 2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs
10.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds
740 pF @ 10 V
Power Dissipation (Max)
1.75W (Tc)
Recommended Models
GT1K2P15D5
Goford Semiconductor
GT040N04T
Goford Semiconductor
CMSP3407T6-HF
Comchip Technology
IGT65R035D2ATMA1
Infineon Technologies
AC3M0060065D
APSEMI
AC3M0025065D
APSEMI
AC3M0040120D
APSEMI
AC3M0075120D
APSEMI
AC2M0040120D
APSEMI
AC3M0040120K
APSEMI
+852 64184651
selena@mpslimited.hk
Add to RFQ
Back to top