GT1K2P15D5
Goford Semiconductor
PMPB08R4VPX
Part Number：
PMPB08R4VPX
Category：
Single FETs, MOSFETs
Manufacturer：
Nexperia USA Inc.
Description：
MOSFET P-CH 12V 12A DFN2020M-6
Packaging：
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Part Status Obsolete
- Mounting Type Surface Mount
- Technology MOSFET (Metal Oxide)
- FET Feature -
- Grade -
- Qualification -
- Operating Temperature -55°C ~ 150°C (TJ)
- FET Type P-Channel
- Vgs (Max) ±8V
- Drain to Source Voltage (Vdss) 12 V
- Current - Continuous Drain (Id) @ 25°C 12A (Ta)
- Vgs(th) (Max) @ Id 900mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 40 nC @ 4.5 V
- Package / Case 6-UDFN Exposed Pad
- Input Capacitance (Ciss) (Max) @ Vds 2200 pF @ 6 V
- Supplier Device Package DFN2020MD-6
- Power Dissipation (Max) 1.9W (Ta), 12.5W (Tc)
- Rds On (Max) @ Id, Vgs 9.6mOhm @ 12A, 4.5V
