GT1K2P15D5
Goford Semiconductor
PMT200EN,135
Part Number：
PMT200EN,135
Category：
Single FETs, MOSFETs
Manufacturer：
NXP USA Inc.
Description：
MOSFET N-CH 100V 1.8A SOT223
Packaging：
Tape & Reel (TR)
ROHS Status:
Yes
Currency:
USD
Specifications
- Part Status Obsolete
- Mounting Type Surface Mount
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 100 V
- Vgs (Max) ±20V
- FET Feature -
- Grade -
- Qualification -
- Operating Temperature -55°C ~ 150°C (TJ)
- Vgs(th) (Max) @ Id 2.5V @ 250µA
- Package / Case TO-261-4, TO-261AA
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Gate Charge (Qg) (Max) @ Vgs 10 nC @ 10 V
- Current - Continuous Drain (Id) @ 25°C 1.8A (Ta)
- Rds On (Max) @ Id, Vgs 235mOhm @ 1.5A, 10V
- Supplier Device Package SC-73
- Input Capacitance (Ciss) (Max) @ Vds 475 pF @ 80 V
- Power Dissipation (Max) 800mW (Ta), 8.3W (Tc)
